Datasheet Details
| Part number | AO4822 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.30 KB |
| Description | 30V Dual N-channel MOSFET |
| Download | AO4822 Download (PDF) |
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| Part number | AO4822 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.30 KB |
| Description | 30V Dual N-channel MOSFET |
| Download | AO4822 Download (PDF) |
|
|
|
The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested 30V 8A <19mW < 26mW SOIC-8 Top View Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 6 D2 D1 G 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8 6.5 48 19 18 2 1.3 -55 to 150 D G S Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 48 74 Maximum Junction-to-Lead Steady-State RqJL 32 Max 62.5 90 40 D S Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 5.1: March 2024 www.aosmd.com Page 1 of 6 AO4822 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 10 mA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 48 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A TJ=125°C 15.5 19 mW 21 25 VGS=4.5V, ID=6A 18.5 26 mW gFS Forward Transconductance VDS=5V, ID=8A 30 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Re
AO4822 30V Dual N-channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4822 | Dual N-Channel MOSFET | Kexin |
 |
AO4822A | 30V Dual N-Channel MOSFET | VBsemi |
|
AO4822A | Dual N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4822A | 30V Dual N-channel MOSFET |
| AO4821 | Dual P-Channel MOSFET |
| AO4824 | Dual N-Channel MOSFET |
| AO4824L | 30V Dual N-Channel MOSFET |
| AO4826 | 60V Dual N-Channel MOSFET |
| AO4828 | 60V Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |