NDT452P transistor equivalent, p-channel enhancement mode field effect transistor.
-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount pac.
such as notebook computer power management and DC motor control.
Features
-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High.
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide supe.
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