NDT456P transistor equivalent, p-channel enhancement mode field effect transistor.
-7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capab.
such as notebook computer power management, battery powered circuits, and DC motor control.
Features
-7.5 A, -30 V. RDS.
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