NDT456P Datasheet - Fairchild

P-Channel Enhancement Mode Field Effect Transistor

NDT456P Features

* -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D

NDT456P General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part.

NDT456P Datasheet (243.34 KB)

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Datasheet Details

Part number:

NDT456P

Manufacturer:

Fairchild

File Size:

243.34 KB

Description:

P-channel enhancement mode field effect transistor.

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NDT456P P-Channel Enhancement Mode Field Effect Transistor Fairchild

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NDT456P Features

NDT456P General Description

Datasheet Details

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Description:

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