NDT456P
Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- 5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. *
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