NDT456P Datasheet | Fairchild Semiconductor

Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management, battery powered circuits, and DC motor control. Features -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) -30 ±20 ±7.5 ±20 (Note 1a) (Note 1b) (Note 1c) Maximum Power Dissipation 3 1.3 1.1 -65 to 150 TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W © 1998 Fairchild Semiconductor Corporation NDT456P Rev. F Electrical Characteristics (T Symbol Parameter OFF CHARACTERISTICS...