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2SD1088 - High Voltage Darlington Power Transistors

Features

  • Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min).
  • Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA.
  • High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification 2SD1088 TO-220AB.

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High Voltage Darlington Power Transistors FEATURES  Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min).  Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA.  High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification 2SD1088 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 250 V 5V 6 A 10 1A 2 W 30 -55 to +150 ℃ X035 Rev.A www.gmesemi.
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