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2SD880 Datasheet Preview

2SD880 Datasheet

NPN Epitaxial Silicon Transistor

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NPN Epitaxial Silicon Transistor
FEATURES
Low frequency power amplifier.
Complememt to 2SB834.
Pb
Lead-free
Production specification
2SD880
TO-220AB
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction and Storage Temperature
Continuous
60 V
7V
3A
1.5 W
-55 to +150
X082
Rev.A
www.gmesemi.com
1




GME

2SD880 Datasheet Preview

2SD880 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Production specification
NPN Epitaxial Silicon Transistor
2SD880
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=100μA,IE=0
60 -
-
V
Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA,IB=0
60 -
-
V
Emitter-base Breakdown Voltage
V(BR)EBO IE=100μA,IC=0
7
-
-
V
Collector Cut-off Current
ICBO VCB=60V,IE=0 - - 100 μA
Emitter Cut-off Current
IEBO VEB=7V,IC=0 - - 100 μA
DC Current Gain
hFE
VCE=5V,IC=500mA 60
-
300 -
Collector-emitter Saturation Voltage
VCE(sat)
IC=3A, IB=300mA -
-
1V
Base-emitter Voltage
VBE
IC=0.5A, VCE=5V -
-
1V
Transition Frequency
Collector output capacitance
Turn-on Time
Storage Time
Fall Time
fT
VCE=5V,IC=500mA -
3
VCB=10V, IE=0,
Cob f=1MHz
- 70 -
ton
IC=2A
- 0.8 -
ts
IB1=-IB2=200mA
-
1.5 -
PW=20us
tf - 0.8 -
MHz
pF
us
us
us
CLASSIFICATION OF hFE
Range
O
Marking
60-120
Y
100-200
GR
150-300
X082
Rev.A
www.gmesemi.com
2


Part Number 2SD880
Description NPN Epitaxial Silicon Transistor
Maker GME
PDF Download

2SD880 Datasheet PDF






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