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2SD880 - NPN Epitaxial Silicon Transistor

Features

  • Low frequency power amplifier.
  • Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature Continuous 60 V 7V 3A 1.5 W -55 to +150 ℃ X082 Rev.A www.gmesemi.com 1 Production specification NPN Epitaxial Silicon Transistor 2SD880 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
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