• Part: PTFC270101M
  • Description: High Power RF LDMOS Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 401.56 KB
Download PTFC270101M Datasheet PDF
Infineon
PTFC270101M
PTFC270101M is High Power RF LDMOS Field Effect Transistor manufactured by Infineon.
Description The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (d B) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 m A, ƒ = 2170 MHz, 3GPP WCDMA signal, 8 d B PAR, 10 MHz carrier spacing, 3.84 MHz bandwidth 23 70 22 Gain 60 50 20 40 19 30 18 20 Efficiency 17 10 16 c270101m-2.1-gr1c 24 26 28 30 32 34 36 38 40 Output Power (d Bm) Features - Unmatched input and output - Typical CW performance, 2170 MHz, 28 V - Output power @ P1d B = 10 W - Gain = 20 d B - Efficiency = 60% - Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 d B PAR - Output power = 1.3 W avg - Gain = 21 d B - Efficiency = 21% - ACPR = - 44.9 d Bc @...