PXAC243502FV
Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC243502FV Package H-37275-4
Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 m A, POUT = 48.3 d Bm, 3GPP WCDMA signal, 10 d B PAR
18 Efficiency 45
16 Gain
35 25
12 15
Features
- Asymmetric design
- Main: 150 W P1d B
- Peak: 200 W P1d B
- Broadband internal matching
- CW performance at 2350 MHz, 28 V
- Ouput power = 250 W P1d B
- Efficiency = 46%
- Gain = 16 d B
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001)
- Low thermal...
