Part number:
PXAC243502FV
Manufacturer:
File Size:
393.74 KB
Description:
High power rf ldmos field effect transistor.
PXAC243502FV Datasheet (393.74 KB)
* include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performa
PXAC243502FV Datasheet (393.74 KB)
PXAC243502FV
393.74 KB
High power rf ldmos field effect transistor.
📁 Related Datasheet
PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
