Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.
Features
- include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4
Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.3 dBm, 3GPP WCDMA signal, 10 dB PAR
20
55
18 Efficiency 45
16 Gain
14
35 25
12 15
Features.
- Asymmetric design - Main: 150 W P1dB - Peak: 200 W P.
PXAC243502FV Datasheet
