FDMS3606AS - Asymmetric Dual N-Channel MOSFET

ON Semiconductor

The FDMS3606AS by ON Semiconductor is a Asymmetric Dual N-Channel MOSFET. Below is the official datasheet preview.

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FDMS3606AS Asymmetric Dual N-Channel MOSFET by ON Semiconductor - Datasheet Preview — Official preview page of the **FDMS3606AS** Asymmetric Dual N-Channel MOSFET datasheet (ON Semiconductor).

Datasheet Details

Part number	FDMS3606AS
Manufacturer	ON Semiconductor
File Size	926.29 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3606AS-ONSemiconductor.pdf
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FDMS3606AS Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Sever G1 D1 D1 D1 D1 PHASE (S1/D2) G2S2S2 S2 Top Power 56 B

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 27 A.
Max rDS(on) = 2.8 mΩ at VGS = 4.5 V, ID = 23 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant General Descr.

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Published: Dec 12, 2021 |