* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H300G4LSGB Datasheet (931.19 KB)
TP65H300G4LSGB
931.19 KB
650v supergan gan fet.
Specifications in this document are tentative and subject to change Datasheet TP65H300G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) PDereslcimri.
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