Description
BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 160 W LDMOS RF power transistor for base station applications.
Features
* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Low Rth providing excellent thermal stability
* Low output capacitance for wideband performance in Doherty applicati
Applications
* The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications. Table 1. Typical performance
RF performance at VDS = 50 V in a common-source Class-AB test circuit. Test signal
f
IDq
VDS P
