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BLF6H10LS-160, BLF6H10L-160 Power LDMOS transistor

BLF6H10LS-160 Description

BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
A 160 W LDMOS RF power transistor for base station applications.

BLF6H10LS-160 Features

* Integrated ESD protection
* Excellent ruggedness
* High power gain
* High efficiency
* Excellent reliability
* Easy power control
* Low Rth providing excellent thermal stability
* Low output capacitance for wideband performance in Doherty applicati

BLF6H10LS-160 Applications

* The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source Class-AB test circuit. Test signal f IDq VDS P

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This datasheet PDF includes multiple part numbers: BLF6H10LS-160, BLF6H10L-160. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF6H10LS-160, BLF6H10L-160
Manufacturer
Ampleon
File Size
367.22 KB
Datasheet
BLF6H10L-160-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF6H10LS-160, BLF6H10L-160.
Please refer to the document for exact specifications by model.

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Power LDMOS transistor Ampleon
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