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BLF8G19LS-170BV Power LDMOS transistor

BLF8G19LS-170BV Description

BLF8G19LS-170BV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

BLF8G19LS-170BV Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (100 M

BLF8G19LS-170BV Applications

* at frequencies from 1800 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA [1] 1930 to 1990 1300 32 60 18.

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Datasheet Details

Part number
BLF8G19LS-170BV
Manufacturer
Ampleon
File Size
415.05 KB
Datasheet
BLF8G19LS-170BV-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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