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CS3N30B23H

Silicon N-Channel Power MOSFET

CS3N30B23H Features

* l Fast Switching l Low ON Resistance(Rdson≤3Ω) l Low Gate Charge (Typical Data:4.2nC) l Low Reverse transfer capacitances(Typical:4.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adapter. Absolute（Tc= 25℃ unless otherwise specified） Symbol Par

CS3N30B23H General Description

VDSS 300 V CS3N30 B23H, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.2 Ω performance and enhance the avalanche energy. The transistor can be used .

CS3N30B23H Datasheet (246.28 KB)

Preview of CS3N30B23H PDF

Datasheet Details

Part number:

CS3N30B23H

Manufacturer:

CR Micro

File Size:

246.28 KB

Description:

Silicon n-channel power mosfet.

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CS3N30B23H Silicon N-Channel Power MOSFET CR Micro

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