CS3N30B23H - Silicon N-Channel Power MOSFET
VDSS 300 V CS3N30 B23H, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.2 Ω performance and enhance the avalanche energy.
The transistor can be used
CS3N30B23H Features
* l Fast Switching l Low ON Resistance(Rdson≤3Ω) l Low Gate Charge (Typical Data:4.2nC) l Low Reverse transfer capacitances(Typical:4.8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adapter. Absolute（Tc= 25℃ unless otherwise specified） Symbol Par
