CS3N30B23H Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CS3N30 B23H General .
VDSS 300 V CS3N30 B23H, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.

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Datasheet Specifications

Part number: CS3N30B23H
Manufacturer: CR Micro
File Size: 246.28 KB
Datasheet: CS3N30B23H-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of LCD Power and adapter. Absolute（Tc= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single

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📁 Related Datasheet

CS3N20ATH CS3N25 CS3N40A23 CS3N40A3H CS3N40A4H CS3N50B3

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CS3N30B23H Silicon N-Channel Power MOSFET CR Micro

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