CGHV60075D5 GaN HEMT Die

Cree

Description

CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT).GaN has superior prope.

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Datasheet Specifications

Part number: CGHV60075D5
Manufacturer: Cree
File Size: 446.77 KB
Datasheet: CGHV60075D5-Cree.pdf
Description: GaN HEMT Die

Features

* 19 dB Typical Small Signal Gain at 4 GHz
* 17 dB Typical Small Signal Gain at 6 GHz
* 65% Typical Power Added Efficiency at 4 GHz
* 60% Typical Power Added Efficiency at 6 GHz
* 75 W Typical PSAT
* 50 V Operation
* High Breakdown Volta

Applications

* 2-Way Private Radio
* Broaband Amplifiers
* Cellular Infrastructure
* Test Instrumentation
* Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Packaging Information
* Bare die are shipped on tape or in Gel-Pak® co

CGHV60075D5 Distributors

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CGHV60075D5 GaN HEMT Die Cree

Cree CGHV60075D5-like datasheet