* 19 dB Typical Small Signal Gain at 4 GHz
* 17 dB Typical Small Signal Gain at 6 GHz
* 65% Typical Power Added Efficiency at 4 GHz
* 60% Typical Power Added Efficiency at 6 GHz
* 75 W Typical PSAT
* 50 V Operation
* High Breakdown Volta
CGHV60075D5 Datasheet (446.77 KB)
CGHV60075D5
Cree
446.77 KB
Gan hemt die.
CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior prope.
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