CY7C10612G Datasheet - Cypress Semiconductor

CY7C10612G - 16-Mbit (1M x 16) Static RAM

The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC.

These devices are offered in single chip enable option.

The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle.

To write to th

CY7C10612G Features

* High speed

* tAA = 10 ns

* Embedded error-correcting code (ECC) for single-bit error correction

* Low active power

* ICC = 90 mA typical

* Low CMOS standby power

* ISB2 = 20 mA typical

* Operating voltages of 3.3 ± 0.3 V

* 1.0 V data retention

* Transistor-t

Datasheet Details

CY7C10612G

Cypress Semiconductor

747.76 KB

16-mbit (1m x 16) static ram.

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