Datasheet4U Logo Datasheet4U.com

MTB011N10RQ8 N-Channel Enhancement Mode Power MOSFET

MTB011N10RQ8 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 Spec.No.: C169Q8 Issued Date : 2016.11.04 Revised Date : Page No.: .

MTB011N10RQ8 Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A

📥 Download Datasheet

Preview of MTB011N10RQ8 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTB011N10RQ8
Manufacturer
Cystech Electonics
File Size
428.54 KB
Datasheet
MTB011N10RQ8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • MTB011 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010N06I3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB010N06RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010N06RI3 - N-Channel MOSFET (CYStech)
  • MTB010N06RJ3 - N-Channel MOSFET (CYStech)
  • MTB013N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB011N10RQ8-like datasheet