F59D8G81KSA Datasheet, Memory, ESMT

F59D8G81KSA Features

• Memory
• Density ­ 8Gb(4Gb x 2)
• Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V)
• Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size

PDF File Details

Part number:

F59D8G81KSA

Manufacturer:

ESMT

File Size:

1.11MB

Download:

📄 Datasheet

Description:

1.8v nand flash memory. The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications. The devic

F59D8G81KSA Application

• Applications The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell

TAGS

F59D8G81KSA

ESMT

📁 Related Datasheet

F59D8G81XB - 8-Gbit 1.8V NAND Flash Memory (ESMT)
ESMT (Preliminary) F59D8G81XB (2X) Flash FEATURES  Density – 8 Gb (4 Gb x 2)  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Open NAND Flash Interface (O.

F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45BG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MB-45TG2M - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.