F59D8G81KSA - 1.8V NAND Flash Memory
The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.
The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase
F59D8G81KSA Features
* Density 8Gb(4Gb x 2)
* Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V)
* Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Block Size: 64Pages = (256K + 16K) bytes Number of Planes: 1 Number of Block per Die (LUN)= 2048
* Automatic Program and Erase
