F59D8G81KSA - 1.8V NAND Flash Memory

ESMT

Datasheet Details

The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.

Density 8Gb(4Gb x 2).
Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V).
Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Block Size: 64Pages = (256K + 16K) bytes Number of Planes: 1 Number of Block per Die (LUN)= 2048.
Automatic Program and Erase Page Program: (4K + 256) bytes Block Erase: (256K + 16K) bytes.
Page Read Operation Random Read: 25us (Max. ) Read Cycle: 45ns.
Write Cycle Time Page Program Time: 400us (Typ. ) 700us.

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Published: Oct 22, 2024 |