F59D8G81XB
ESMT
2.08MB
8-gbit 1.8v nand flash memory. The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications. NAND Flas
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F59D8G81KSA - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
(Preliminary)
F59D8G81KSA (2R)
8 Gbit (1Gb x 8) 1.8V NAND Flash Memory
FEATURES
Density 8Gb(4Gb x 2)
Voltage Supply VCC: 1.8V (1.
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MA-45TG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MB - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MB-45BG2M - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G161MB-45TG2M - 1.8V NAND Flash Memory
(ESMT)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.
F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
(Elite Semiconductor)
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization
x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.