F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory

Elite Semiconductor

F59L512M81A Product details

The device is a 64Mx8bit with spare 2Mx8bit capacity..

Voltage Supply: 2.7V ~ 3.6V.
Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Program time: 250us (Typ. ) - Block Erase time: 2ms (Typ. ).
Command/Address/Data Multiplexed I/O.

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Elite Semiconductor F59L512M81A-like datasheet

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F59L512M81A Stock/Price