FDG6304P Datasheet, Fet, Fairchild Semiconductor

FDG6304P Features

• Fet -25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (V

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FDG6304P

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Fairchild Semiconductor

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📄 Datasheet

Description:

Dual p-channel/ digital fet. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell dens

FDG6304P Application

• Applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features -25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) =

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FDG6304P

Fairchild Semiconductor

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