FDG6304P Dual P-Channel/ Digital FET

Fairchild Semiconductor

Description

July 1999 FDG6304P Dual P-Channel, Digital FET General .
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technol.

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Datasheet Specifications

Part number: FDG6304P
Manufacturer: Fairchild Semiconductor
File Size: 227.14 KB
Datasheet: FDG6304P_FairchildSemiconductor.pdf
Description: Dual P-Channel/ Digital FET

Features

* -25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 sur

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FDG6304P Dual P-Channel Digital FET Fairchild Semiconductor

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