FDG6342L
Fairchild Semiconductor
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Integrated load switch. This device is particularly suited for compact power management in portable electronic equipment where 1.5V to 8V input and 1.5A outp
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FDG6342L - Integrated Load Switch
(ON Semiconductor)
FDG6342L Integrated Load Switch
FDG6342L
Integrated Load Switch
Features
Max rDS(on) = 150mΩ at VGS = 4.5V, ID = –1.5A Max rDS(on) = 195mΩ at VGS.
FDG6301N - Dual N-Channel/ Digital FET
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July 1999
FDG6301N Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode field effect transistors are pro.
FDG6301N - Dual N-Channel Digital FET
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FDG6301N-F085 - Dual N-Channel Digital FET
(ON Semiconductor)
Dual N-Channel, Digital FET
FDG6301N-F085
Features
• 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7.
FDG6302P - Dual P-Channel/ Digital FET
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These dual P-Channel logic level enhancement mode field effect transistors are pro.
FDG6303N - Dual N-Channel Digital FET
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FDG6303N Dual N-Channel, Digital FET
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These dual N-Channel logic level enhancement mode field effect transistors are pro.
FDG6303N - Dual N-Channel Digital FET
(ON Semiconductor)
Digital FET, Dual N-Channel FDG6303N
General Description These dual N−Channel logic level enhancement mode field effect
transistors are produced usin.
FDG6304P - Dual P-Channel Digital FET
(ON Semiconductor)
Digital FET, Dual P-Channel FDG6304P
General Description These dual P−Channel logic level enhancement mode field effect
transistors are produced usin.
FDG6304P - Dual P-Channel/ Digital FET
(Fairchild Semiconductor)
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These dual P-Channel logic level enhancement mode field effect transistors are pro.
FDG6306P - P-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET– Specified, P-Channel, POWERTRENCH)
2.5 V
FDG6306P
General Description This P−Channel 2.5 V specified MOSFET is a r.