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FDMS86163P P-Channel PowerTrench MOSFET

FDMS86163P Description

FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

FDMS86163P Features

* Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
* Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
* Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg

FDMS86163P Applications

* as well as load switch applications
* 100% UIL tested

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P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDMS86163P-like datasheet