FDMS86163P P-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ .
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDMS86163P
Manufacturer: Fairchild Semiconductor
File Size: 256.84 KB
Datasheet: FDMS86163P-FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A
* Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A
* Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg

Applications

* as well as load switch applications
* 100% UIL tested

FDMS86163P Distributors

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FDMS86163P P-Channel PowerTrench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS86163P-like datasheet