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FDMS86163P

P-Channel PowerTrench MOSFET

FDMS86163P Features

* Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A

* Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A

* Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg

* This product is optimised for fast switching applications as well as load switch applic

FDMS86163P General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications

* Active Clamp Switch

* Load Switch Top Bottom Pin 1 SS.

FDMS86163P Datasheet (256.84 KB)

Preview of FDMS86163P PDF

Datasheet Details

Part number:

FDMS86163P

Manufacturer:

Fairchild Semiconductor

File Size:

256.84 KB

Description:

P-channel powertrench mosfet.

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TAGS

FDMS86163P P-Channel PowerTrench MOSFET Fairchild Semiconductor

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