FDMS86163P - P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDMS86163P
Manufacturer	Fairchild Semiconductor
File Size	256.84 KB
Description	P-Channel PowerTrench MOSFET
Datasheet	FDMS86163P-FairchildSemiconductor.pdf

FDMS86163P Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Active Clamp Switch Load Switch Top Bottom Pin 1 SS S S GS Power 56 D D D D S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain

Features

Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A.
Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A.
Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg.
This product is optimised for fast switching.

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Published: May 19, 2016 |