FDN342P Datasheet, Mosfet, Fairchild Semiconductor

FDN342P Features

• Mosfet • • • • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced p

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FDN342P

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Fairchild Semiconductor

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📄 Datasheet

Description:

P-channel mosfet. This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.

FDN342P Application

• Applications for a wide range of gate drive voltages (2.5V - 12V). Features • • • • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @

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FDN342P

Fairchild Semiconductor

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