FDN359BN

The FDN359BN is N-Channel Logic Level PowerTrench MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDN359BN
Manufacturer	Fairchild Semiconductor
File Size	94.88 KB
Description	N-Channel Logic Level PowerTrench MOSFET
Datasheet	FDN359BN-FairchildSemiconductor.pdf
Additional preview pages of the FDN359BN datasheet.

Product details

Description

This N-Channel Logic Level MOSFET is produced using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

2.7 A, 30 V. RDS(ON)= 0.046 Ω @ VGS = 10 V RDS(ON)= 0.060 Ω @ VGS = 4.5 V.
Very fast switching speed.
Low gate charge (5nC typical).
High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. DD SuperSOTTM-3 G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current.
Contin.

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Published: Feb 26, 2015 |