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FDC638P P-Channel MOSFET

FDC638P Description

June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General .
This P -Channel 2.

FDC638P Features

* -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM

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