FDN308P - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDN308P
Manufacturer	Fairchild Semiconductor
File Size	96.53 KB
Description	P-Channel MOSFET
Datasheet	FDN308P_FairchildSemiconductor.pdf

This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. 12V).

20 V,.
1.5 A. RDS(ON) = 125 mΩ @ VGS =.
4.5 V RDS(ON) = 190 mΩ @ VGS =.
2.5 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

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Published: Mar 30, 2005 |