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FDP020N06B - N-Channel PowerTrench MOSFET

FDP020N06B Description

FDP020N06B * N-Channel PowerTrench® MOSFET FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resist.

FDP020N06B Features

* RDS(on) = 1.65 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse-Recovery Charge, Qrr = 194 nC
* Soft Reverse-Recovery Body Diode
* Enables High Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100%

FDP020N06B Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Renewable System D GDS TO-220 G S Absolute Maximum Ratings TC = 25oC unless otherwise noteed. Symbol Parameter VDSS VGSS

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N-Channel PowerTrench MOSFET Fairchild Semiconductor
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