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FQAF22P10 100V P-Channel MOSFET

FQAF22P10 Description

FQAF22P10 QFET FQAF22P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQAF22P10 Features

* -16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V Low gate charge ( typically 40 nC) Low Crss ( typically 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G D S TO-

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