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FPD750SOT89 - LOW NOISE HIGH LINEARITY PACKAGED PHEMT

FPD750SOT89 Description

FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT .
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

FPD750SOT89 Features

* (1.85GHZ):
* Datasheet 3.0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www. DataSheet4U. com

FPD750SOT89 Applications

* Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1dB Gain Compression Small-Signal Gain SYMBO

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LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FPD750SOT89-like datasheet