MRF6S19060NBR1 Datasheet - Freescale Semiconductor

MRF6S19060NBR1, RF Power Field Effect Transistors

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev.3, 5/2006 RF Power Field Effect Transistors N - Chann.
100 nF Chip Capacitor 6.

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, P

MRF6S19060NBR1_FreescaleSemiconductor.pdf