MRF6S19100NBR1 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF6S19100NBR1 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF6S19100NBR1 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF6S19100NBR1** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF6S19100NBR1
Manufacturer	Freescale Semiconductor
File Size	661.67 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19100NBR1_FreescaleSemiconductor.pdf
Additional preview pages of the MRF6S19100NBR1 datasheet.

MRF6S19100NBR1 Product details

Description

10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.1 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kΩ, 1/4 W Chip Resistor (1206) 10 kΩ, 1/4 W Chip Resistor (1206) 10 Ω, 1/4 W Chip Resistor (1206) 600B5R1BT250XT 600B9R1BT250XT GRM55DR61H106KA88L ATC ATC Murata Part Number T491D106K035AS Manufacturer Kemet MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 3 R2 C2 C3 C4 R1 C1 www.datasheet4u.com R3 C5 C6 CUT OUT AREA C7 C8 C1

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
N Suffix Indicates Lead - Free Terminations.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Jun 10, 2009 |