MRF6S19100NBR1 Datasheet - Freescale Semiconductor

MRF6S19100NBR1 RF Power Field Effect Transistors

10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.1 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kΩ, 1/4 W Chip Resistor (1206) 10 kΩ, 1/4 W Chip Resistor (1206) 10 Ω, 1/4 W Chip Resistor (1206) 600B5R1BT250XT 600B9R1BT250XT GRM55DR61H106KA88L ATC ATC.

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. Typical 2 - Carrier N - CDMA Performan.

MRF6S19100NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* N Suffix Indicates Lead - Free Terminations

* Designed for Low

MRF6S19100NBR1 Datasheet (661.67 KB)

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Datasheet Details

Part number:

MRF6S19100NBR1

Manufacturer:

Freescale Semiconductor

File Size:

661.67 KB

Description:

Rf power field effect transistors.

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