MRF6S19100NBR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.

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Datasheet Specifications

Part number: MRF6S19100NBR1
Manufacturer: Freescale Semiconductor
File Size: 661.67 KB
Datasheet: MRF6S19100NBR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* N Suffix Indicates Lead - Free Terminations
* Designed for Low

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Vo

MRF6S19100NBR1 Distributors

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MRF6S19100NBR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S19100NBR1-like datasheet