* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* N Suffix Indicates Lead - Free Terminations
* Designed for Low
MRF6S19100NBR1 Datasheet (661.67 KB)
MRF6S19100NBR1
Freescale Semiconductor
661.67 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6S19100N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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