* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Designed for Lower Memory E
MRF6S19120HSR3 Datasheet (483.65 KB)
MRF6S19120HSR3
Freescale Semiconductor
483.65 KB
Rf power transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6S19120H Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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