MRF6S19120HR3 Datasheet (Freescale Semiconductor)

MRF6S19120HR3, RF Power Transistors

Part Number 2743019447 100B100JP50X 100B5R1CP50X 100B102JP50X C1825C100J5RAC T491X106K035AS GRM55DR61H106KA88L T491C105K022AS MCR63V470M8X11 CRCW1206560F100 CRCW1206010F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Murata Kemet Multicomp Vishay Vishay MRF6S19120HR3 MRF6S19120HSR3 RF Device D

Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications.

Typical Single - Carrier N - CDMA Perf

MRF6S19120HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Designed for Lower Memory E