MRF6S19100HSR3, MRF6S19100HR3 Datasheet (Freescale Semiconductor)

MRF6S19100HSR3, MRF6S19100HR3, RF Power Field Effect Transistors

Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRCW120612R0F100 CRCW12062001F100 Manufacturer Fair - Rite Johanson Dielectrics ATC Kemet Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay MRF6S19100

Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev.

3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications.

Typical 2 - Carrier N - CDMA Performanc

MRF6S19100HSR3 Features

* PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 19