MRF6S19100HSR3, MRF6S19100HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev.3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRC.

📥 Download Datasheet

MRF6S19100HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S19100HSR3, MRF6S19100HR3. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MRF6S19100HSR3, MRF6S19100HR3
Manufacturer: Freescale Semiconductor
File Size: 447.55 KB
Datasheet: MRF6S19100HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S19100HSR3, MRF6S19100HR3.
Please refer to the document for exact specifications by model.

Features

* PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 19

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Vo

MRF6S19100HSR3 Distributors

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MRF6S19100HR3 Power Field Effect Transistors Freescale Semiconductor

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