Datasheet Specifications
- Part number
- MRF6S19100HR3
- Manufacturer
- Freescale Semiconductor
- File Size
- 447.55 KB
- Datasheet
- MRF6S19100HR3_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistors
Description
Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev.3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Features
* PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 19Applications
* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.MRF6S19100HR3 Distributors
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