* PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 19
MRF6S19100HR3 Datasheet (447.55 KB)
MRF6S19100HR3
Freescale Semiconductor
447.55 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6S19100H Rev. 3, 8/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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