MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev.2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Beads, Surface Mount 39 pF Chip Capacitors 9.

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Datasheet Specifications

Part number: MRF6S19140HR3
Manufacturer: Freescale Semiconductor
File Size: 399.61 KB
Datasheet: MRF6S19140HR3_FreescaleSemiconductor.pdf
Description: N-Channel Enhancement-Mode Lateral MOSFETs

Features

* 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 300 18 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 9 8 0 12 V 50 100 150 16 V IDQ = 1150 mA f = 1960 MHz 200 250 20 V 24 V 28 V VDD = 32 V Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg. , Full Frequency B

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MRF6S19140HR3 N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor

Freescale Semiconductor MRF6S19140HR3-like datasheet