Description
Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev.2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Beads, Surface Mount 39 pF Chip Capacitors 9.
Features
* 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps
70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 300
18 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 9 8 0 12 V 50 100 150 16 V IDQ = 1150 mA f = 1960 MHz 200 250 20 V 24 V 28 V VDD = 32 V
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and
Applications
* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg. , Full Frequency B
