MRF6S19140HSR3, MRF6S19140HR3 Datasheet - Freescale Semiconductor

MRF6S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs

Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitors 470 µF, 63 V Electrolytic Capacitor 560 kΩ, 1/8 W Chip Resistors (1206) 1.0 kΩ, 1/8 W Chip Resistors (1206) 12 Ω, 1/8 W Chip Resistors (1206) Part Number 274301944.

Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg..

MRF6S19140HSR3 Features

* 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 300 18 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 9 8 0 12 V 50 100 150 16 V IDQ = 1150 mA f = 1960 MHz 200 250 20 V 24 V 28 V VDD = 32 V Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and

MRF6S19140HR3_FreescaleSemiconductor.pdf