MRF6S19140HSR3 Datasheet, Mosfets, Freescale Semiconductor

MRF6S19140HSR3 Features

• Mosfets PR, IM3, Power Gain and Drain Efficiency versus Output Power 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 28 Vdc, IDQ = 1150 mA f = 1960 MHz

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MRF6S19140HSR3

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Freescale Semiconductor

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📄 Datasheet

Description:

N-channel enhancement-mode lateral mosfets. Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacit

MRF6S19140HSR3 Application

• Applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN

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MRF6S19140HSR3

Freescale Semiconductor

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