* 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 300 18 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 9 8 0 12 V 50 100 150 16 V IDQ = 1150 mA f = 1960 MHz 200 250 20 V 24 V 28 V VDD = 32 V Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and
MRF6S19140HSR3 Datasheet (399.61 KB)
MRF6S19140HSR3
Freescale Semiconductor
399.61 KB
N-channel enhancement-mode lateral mosfets.
Freescale Semiconductor Technical Data
Document Number: MRF6S19140H Rev. 2, 7/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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