MRF6S19140HR3_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S19140HSR3, MRF6S19140HR3
Manufacturer:
Freescale Semiconductor
File Size:
399.61 KB
Description:
N-channel enhancement-mode lateral mosfets.
Note:
This datasheet PDF includes multiple part numbers: MRF6S19140HSR3, MRF6S19140HR3.
Please refer to the document for exact specifications by model.
MRF6S19140HSR3, MRF6S19140HR3, N-Channel Enhancement-Mode Lateral MOSFETs
Beads, Surface Mount 39 pF Chip Capacitors 9.1 pF Chip Capacitors 10 µF, 50 V Chip Capacitors (2220) 47 µF, 50 V Electrolytic Capacitors 470 µF, 63 V Electrolytic Capacitor 560 kΩ, 1/8 W Chip Resistors (1206) 1.0 kΩ, 1/8 W Chip Resistors (1206) 12 Ω, 1/8 W Chip Resistors (1206) Part Number 274301944
Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev.
2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA, Pout = 29 Watts Avg.
MRF6S19140HSR3 Features
* 8 Vdc, IDQ = 1150 mA f = 1960 MHz, TC = 25°C 100 Gps 70 ηD, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 0 300 18 17 16 Gps, POWER GAIN (dB) 15 14 13 12 11 10 9 8 0 12 V 50 100 150 16 V IDQ = 1150 mA f = 1960 MHz 200 250 20 V 24 V 28 V VDD = 32 V Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and
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