Description
Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* N Suffix Indicates Lead - Free Terminations
* Designed for Low
Applications
* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www. datasheet4u. com applications.
* Typical 2 - Carrier N - CDMA Performance: VDD = 28 Vo
