MRF6S19060NR1 Datasheet - Freescale Semiconductor

MRF6S19060NR1 RF Power Field Effect Transistors

100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2 .

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. Typical 2 - Carrier N - CDMA Performa.

MRF6S19060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

MRF6S19060NR1 Datasheet (636.01 KB)

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Datasheet Details

Part number:

MRF6S19060NR1

Manufacturer:

Freescale Semiconductor

File Size:

636.01 KB

Description:

Rf power field effect transistors.

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MRF6S19060NR1 Power Field Effect Transistors Freescale Semiconductor

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