* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
MRF6S19060NR1 Datasheet (636.01 KB)
MRF6S19060NR1
Freescale Semiconductor
636.01 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF6S19060N Rev. 3, 5/2006
RF Power Field Effect Transistors
N - Chann.
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