MRF6S19060NBR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S19060NR1, MRF6S19060NBR1
Manufacturer:
Freescale Semiconductor
File Size:
636.01 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S19060NR1, MRF6S19060NBR1.
Please refer to the document for exact specifications by model.
MRF6S19060NR1, MRF6S19060NBR1, RF Power Field Effect Transistors
100 nF Chip Capacitor 6.8 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kW Chip Resistor 10 kW Chip Resistor 10 W Chip Resistor Part Number CDR33BX104AKWS 600B6R8BT250XT GRM55DR61H106KA88L Manufacturer Kemet ATC Murata MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor 3 R1 R2
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev.
3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .
To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
Typical 2 - Carrier N - CDMA Performa
MRF6S19060NR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App
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