* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
MRF6S19200HSR3 Datasheet (443.02 KB)
MRF6S19200HSR3
Freescale Semiconductor
443.02 KB
Rf power transistors.
Freescale Semiconductor Technical Data
Document Number: MRF6S19200H Rev. 0, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode.
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