Description
Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev.0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Short Ferrite Bead 10 μF, 50 V Electrolytic Capacitor 0.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
Applications
* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. www. datasheet4u. com
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts
