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MRF18090BR3 - LATERAL N-CHANNEL RF POWER MOSFETs

MRF18090BR3 Description

Freescale Semiconductor Technical Data Document Number: MRF18090B Rev.7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode L.

MRF18090BR3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection www. DataSheet4U. com
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equi

MRF18090BR3 Applications

* with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
* GSM and EDGE Performances, Full Frequency Band Power Gain
* 13.5 dB (Typ) @ 90 Watts (CW) Efficiency

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Datasheet Details

Part number
MRF18090BR3
Manufacturer
Freescale Semiconductor
File Size
413.93 KB
Datasheet
MRF18090BR3_FreescaleSemiconductor.pdf
Description
LATERAL N-CHANNEL RF POWER MOSFETs

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LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor
Freescale Semiconductor MRF18090BR3-like datasheet