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MRF5P20180HR6 RF Power Field Effect Transistor

MRF5P20180HR6 Description

Freescale Semiconductor Technical Data MRF5P20180HR6 Rev.0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET.
1.

MRF5P20180HR6 Features

* 2-Carrier W-CDMA Spectrum MRF5P20180HR6 6 RF Device Data Freescale Semiconductor f = 1930 MHz Zload f = 1990 MHz f = 1990 MHz Zo = 25 Ω Zsource f = 1930 MHz VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 1930 1960 1990 Zsource Ω 6.54 - j16.04 9.70 - j17.92 13.88 - j20.46 Zload Ω 4.06 - j5.

MRF5P20180HR6 Applications

* with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
* Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 800 mA, Pout = 38 Watts Avg. , Full Frequenc

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Power Field Effect Transistor Freescale Semiconductor
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