MRF6S19200HSR3, MRF6S19200HR3 RF Power Transistors

Freescale Semiconductor

MRF6S19200HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev.0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Short Ferrite Bead 10 μF, 50 V Electrolytic Capacitor 0.

MRF6S19200HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

MRF6S19200HSR3 Applications

* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. www. datasheet4u. com
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts

📥 Download Datasheet

MRF6S19200HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S19200HSR3, MRF6S19200HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S19200HSR3, MRF6S19200HR3
Manufacturer: Freescale Semiconductor
File Size: 443.02 KB
Datasheet: MRF6S19200HR3_FreescaleSemiconductor.pdf
Description: RF Power Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S19200HSR3, MRF6S19200HR3.
Please refer to the document for exact specifications by model.

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