MRF6S27050HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S27050HR3 Description

Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev.1, 12/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Chann.
Part Number 2508051107Y0 2743019447 ATC100B4R3BT500XT ATC100B3R6BT500XT C1825C225J5RAC C1825C103J1RAC T491D226K025AT T491D476K016AT T491D106K050AT GRM.

MRF6S27050HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

MRF6S27050HR3 Applications

* with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg. , f = 2615 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8.5

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Datasheet Details

Part number: MRF6S27050HR3
Manufacturer: Freescale Semiconductor
File Size: 493.58 KB
Datasheet: MRF6S27050HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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