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MRFE6S9160HSR3, MRFE6S9160HR3 RF Power Field Effect Transistors

MRFE6S9160HSR3 Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and.
Part Number B1, B2 Ferrite Beads, Small 2743019447 C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT C3, C11 0.

MRFE6S9160HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 5

MRFE6S9160HSR3 Applications

* with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
* TTIDyrQapfif=cica1lC2So0idn0egmsleA8-,CTPahorruroiteu=rgN3h5-1CW3D)aCMtthsAa. AnPvngee. rl,foBISram-n9ad5nwcCiedDt@hM=A818(.0P22iMlo8Ht8, zSM:yVHnDzc. D, PP=Aa2Rg8in=Vg9o, . l8ts,dB @ 0.01% Probability on C

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This datasheet PDF includes multiple part numbers: MRFE6S9160HSR3, MRFE6S9160HR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRFE6S9160HSR3, MRFE6S9160HR3
Manufacturer
Freescale Semiconductor
File Size
537.16 KB
Datasheet
MRFE6S9160HR3-FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRFE6S9160HSR3, MRFE6S9160HR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor
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