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CS1N60C1HD - Silicon N-Channel Power MOSFET

CS1N60C1HD Description

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS1N60C1HD General .
CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

CS1N60C1HD Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain C

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Silicon N-Channel Power MOSFET Huajing Microelectronics
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