2SD1673 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High DC Current Gain- : hFE= 1000( Min. Low Collector Saturation V.

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Datasheet Specifications

Part number: 2SD1673
Manufacturer: INCHANGE
File Size: 186.03 KB
Datasheet: 2SD1673-INCHANGE.pdf
Description: NPN Transistor

Applications

* For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Curren

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2SD1673 NPN Transistor INCHANGE

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