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2SD1673

NPN Transistor

2SD1673 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)
*High DC Current Gain- : hFE= 1000( Min.) @ IC= 7A
*Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*For l.

2SD1673 Datasheet (186.03 KB)

Preview of 2SD1673 PDF

Datasheet Details

Part number:

2SD1673

Manufacturer:

INCHANGE

File Size:

186.03 KB

Description:

Npn transistor.

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2SD1673 NPN Transistor INCHANGE

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