2SD1677 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD1677

Manufacturer:

INCHANGE

File Size:

208.49kb

Download:

📄 Datasheet

Description:

Npn transistor.

  • High Breakdown Voltage- : VCBO= 1500V (Min)
  • High Switching Speed
  • High Reliability
  • Minimum Lot-to-

  • Datasheet Preview: 2SD1677 📥 Download PDF (208.49kb)
    Page 2 of 2SD1677

    2SD1677 Application

    • Applications
    • Color TV horizontal deflection output
    • Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

    TAGS

    2SD1677
    NPN
    Transistor
    INCHANGE

    📁 Related Datasheet

    2SD1670 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- :.

    2SD1671 - NPN Silicon Transistor (ETC)
    .. .

    2SD1672 - NPN Silicon Transistor (ETC)
    .. .

    2SD1673 - NPN Transistor (INCHANGE)
    INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) .

    2SD1676 - NPN Silicon Transistor (Hitachi Semiconductor)
    .. 2SD1676 Silicon NPN with Internal Resistance Application Low frequency amplifier, Muting, Switching, Inverter Outline 2SD1676 .

    2SD1677 - SILICON POWER TRANSISTOR (SavantIC)
    SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1677 .. DESCRIPTION ·With TO-3PN package ·High bre.

    2SD1678 - NPN Transistor (INCHANGE)
    INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 15A ·High Collector.

    2SD1600 - NPN Transistor (INCHANGE)
    INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-.

    2SD1601 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

    2SD1602 - Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts