2SD1678
INCHANGE
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Npn transistor.
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2SD1670 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1670
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High DC Current Gain-
:.
2SD1671 - NPN Silicon Transistor
(ETC)
..
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2SD1672 - NPN Silicon Transistor
(ETC)
..
.
2SD1673 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1673
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) .
2SD1676 - NPN Silicon Transistor
(Hitachi Semiconductor)
..
2SD1676
Silicon NPN with Internal Resistance
Application
Low frequency amplifier, Muting, Switching, Inverter
Outline
2SD1676
.
2SD1677 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot.
2SD1677 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1677
..
DESCRIPTION ·With TO-3PN package ·High bre.
2SD1600 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1600
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A ·Collector-.
2SD1601 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1601
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain
: h.
2SD1602 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
2SD1602
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: h.