2SD1670 Datasheet - Inchange Semiconductor

2SD1670 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) *High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A *Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *For .

2SD1670 Datasheet (219.21 KB)

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Datasheet Details

Part number:

2SD1670

Manufacturer:

Inchange Semiconductor

File Size:

219.21 KB

Description:

Power transistor.

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2SD1670 Power Transistor Inchange Semiconductor

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