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2SD1670 Power Transistor

2SD1670 Description

isc Silicon NPN Darlington Power Transistor 2SD1670 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 1000( Min. Low Collector Saturation.

2SD1670 Applications

* For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Curren

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Power Transistor Inchange Semiconductor
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