2SD1670 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SD1670

Manufacturer:

Inchange Semiconductor

File Size:

219.21kb

Download:

📄 Datasheet

Description:

Power transistor. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A

2SD1670 Application

• Applications
• For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

TAGS

2SD1670

Inchange Semiconductor

📁 Related Datasheet

2SD1671 - NPN Silicon Transistor (ETC)
.. .

2SD1672 - NPN Silicon Transistor (ETC)
.. .

2SD1673 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) .

2SD1676 - NPN Silicon Transistor (Hitachi Semiconductor)
.. 2SD1676 Silicon NPN with Internal Resistance Application Low frequency amplifier, Muting, Switching, Inverter Outline 2SD1676 .

2SD1677 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot.

2SD1677 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1677 .. DESCRIPTION ·With TO-3PN package ·High bre.

2SD1678 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 15A ·High Collector.

2SD1600 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-.

2SD1601 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : h.

2SD1602 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : h.