2SD1670 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1670 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain- : hFE= 1000( Min. Low Collector Saturation.

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Datasheet Specifications

Part number: 2SD1670
Manufacturer: Inchange Semiconductor
File Size: 219.21 KB
Datasheet: 2SD1670_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Curren

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2SD1670 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1670-like datasheet