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2SD1670

Power Transistor

2SD1670 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
*High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A
*Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*For .

2SD1670 Datasheet (219.21 KB)

Preview of 2SD1670 PDF

Datasheet Details

Part number:

2SD1670

Manufacturer:

Inchange Semiconductor

File Size:

219.21 KB

Description:

Power transistor.

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2SD1670 Power Transistor Inchange Semiconductor

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