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STP25N10F7 N-Channel MOSFET

STP25N10F7 Description

isc N-Channel MOSFET Transistor STP25N10F7 .
These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. Low Drain-Source On-Resistance APPLIC.

STP25N10F7 Features

* Drain Current
* ID= 25A@ TC=25℃
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max)
* 100% avalanche tested

STP25N10F7 Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Tempe

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Datasheet Details

Part number
STP25N10F7
Manufacturer
INCHANGE
File Size
233.34 KB
Datasheet
STP25N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STP25N10F7-like datasheet